相位裕度
线路调节
带隙基准
电流镜
跌落电压
低压差调节器
电容器
负荷调节
运算放大器
物理
电压
控制理论(社会学)
电压基准
晶体管
放大器
材料科学
光电子学
电气工程
计算机科学
CMOS芯片
工程类
人工智能
控制(管理)
作者
Yidong Cao,Zhenchao Wen
标识
DOI:10.1109/icicm54364.2021.9660242
摘要
This paper presents a wide input voltage range, low quiescent current low-dropout voltage (LDO) regulator. Featuring the NPN transistors in the BGR circuit operate as the differential input pair of operational trans conductance amplifier (OTA). Current mirror with $\beta$ helper structure and class AB output stage of OTA are introduced to improve the accuracy of entire circuit. The proposed LDO is simulated based on 400 nm BCD process. The simulation results shows that the proposed LDO regulator achieved 3.2$\mu$A quiescent current with the fixed output voltage 3. 3V. The BGR output voltage has a 186ppm$/^{\circ}$C temperature coefficient (TC) when temperature varies from - 55°C to 125°C. The proposed LDO has a line regulation of 11mV when input voltage varies from 4.3V to 24V and a load regulation of 12.8mV with load current range from 5$\mu$A to 50mA. The STB(stability) analysis result shows that the circuit provides a gain over 55dB with a gain-bandwidth (GBW) above 5kHz, and a phase margin (PM) over 45 degree with a load capacitor equal to 1$\mu$F for different load conditions.
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