Characterization of polysilicon films by Raman spectroscopy and transmission electron microscopy: A comparative study

Samples of chemically-vapor-deposited micrometer and sub-micrometer-thick films of polysilicon were analyzed by transmission electron microscopy (TEM) in cross-section and by Raman spectroscopy with illumination at their surface. TEM and Raman spectroscopy both find varying amounts of polycrystalline and amorphous silicon in the wafers. Raman spectra obtained using blue, green and red excitation wavelengths to vary the Raman sampling depth are compared with TEM cross-sections of these films. Films showing crystalline columnar structures in their TEM micrographs have Raman spectra with a band near 497 cm{sup {minus}1} in addition to the dominant polycrystalline silicon band (521 cm{sup {minus}1}). The TEM micrographs of these films have numerous faulted regions and fringes indicative of nanometer-scale silicon structures, which are believed to correspond to the 497cm{sup {minus}1} Raman band.