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Monolithic Two-Terminal Tandem Solar Cells Using Sb2S3 and Solution-Processed PbS Quantum Dots Achieving an Open-Circuit Potential beyond 1.1 V

材料科学 串联 太阳能电池 开路电压 量子点 佩多:嘘 量子效率 带隙 光电子学 吸收(声学) 短路 混合太阳能电池 能量转换效率 纳米技术 聚合物太阳能电池 图层(电子) 电压 量子力学 物理 复合材料
作者
Selina Kern,Gyusang Yi,Pascal Büttner,Florian Scheler,Minh-Hoa Tran,Sofia Korenko,Katharina E. Dehm,Ivan Kundrata,Achim Zahl,Steve Albrecht,Julien Bachmann,Ryan W. Crisp
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:16 (11): 13903-13913 被引量:3
标识
DOI:10.1021/acsami.3c16154
摘要

Multijunction solar cells have the prospect of a greater theoretical efficiency limit than single-junction solar cells by minimizing the transmissive and thermalization losses a single absorber material has. In solar cell applications, Sb2S3 is considered an attractive absorber due to its elemental abundance, stability, and high absorption coefficient in the visible range of the solar spectrum, yet with a band gap of 1.7 eV, it is transmissive for near-IR and IR photons. Using it as the top cell (the cell where light is first incident) in a two-terminal tandem architecture in combination with a bottom cell (the cell where light arrives second) of PbS quantum dots (QDs), which have an adjustable band gap suitable for absorbing longer wavelengths, is a promising approach to harvest the solar spectrum more effectively. In this work, these two subcells are monolithically fabricated and connected in series by a poly(3,4-ethylene-dioxythiophene) polystyrene sulfonate (PEDOT:PSS)–ZnO tunnel junction as the recombination layer. We explore the surface morphology of ZnO QD films with different spin-coating conditions, which serve as the PbS QD cell's electron transport material. Furthermore, we examine the differences in photogenerated current upon varying the PbS QD absorber layer thickness and the electrical and optical characteristics of the tandem with respect to the stand-alone reference cells. This tandem architecture demonstrates an extended spectral response into the IR with an open-circuit potential exceeding 1.1 V and a power conversion efficiency of 5.6%, which is greater than that of each single-junction cell.

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