堆积
共价键
材料科学
电阻随机存取存储器
共价有机骨架
化学物理
电阻式触摸屏
氢键
纳米技术
灵活性(工程)
光电子学
化学
分子
计算机科学
电极
统计
数学
有机化学
物理化学
计算机视觉
作者
Shimin Chen,Junfeng Yan,Yisi Yang,Fahui Xiang,Zizhu Yao,Zhang-Jin Zhang,Yunbin Li,Yongfan Zhang,Shengchang Xiang,Banglin Chen,Zhang-Jin Zhang
标识
DOI:10.1038/s41467-023-44214-x
摘要
Abstract The inherent structural flexibility and reversibility of non-covalent organic frameworks have enabled them to exhibit switchable multistate structures under external stimuli, providing great potential in the field of resistive switching (RS), but not well explored yet. Herein, we report the 0D+1D hydrogen-bonded polycatenation non-covalent organic framework (HOF-FJU-52), exhibiting diverse and reversible RS behaviors with the high performance. Triggered by the external stimulus of electrical field E at room temperature, HOF-FJU-52 has excellent resistive random-access memory (RRAM) behaviors, comparable to the state-of-the-art materials. When cooling down below 200 K, it was transferred to write-once-read-many-times memory (WORM) behaviors. The two memory behaviors exhibit reversibility on a single crystal device through the temperature changes. The RS mechanism of this non-covalent organic framework has been deciphered at the atomic level by the detailed single-crystal X-ray diffraction analyses, demonstrating that the structural dual-flexibility both in the asymmetric hydrogen bonded dimers within the 0D loops and in the infinite π–π stacking column between the loops and chains contribute to reversible structure transformations between multi-states and thus to its dual RS behaviors.
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