Compensation effect enables high‐mobility in Te‐doped gallium antimonide

Abstract High crystal perfection, large diameter, and low defect density gallium antimonide (GaSb) crystals are always the targets for fabricating high‐quality GaSb‐based chips. Therefore, the high‐mobility Te‐doping GaSb and its scattering mechanism have been a mainstream research object. However, the complex defect recognition and underlying defect‐regulating scattering mechanism have been an urgent need to clarify. Herein, we explore the intrinsic Ga vacancy and complex defect contributing to p‐type characteristics in undoped GaSb, resulting in low mobility. Meanwhile, the Te‐doped counterpart develops electron transport, which generates a high‐mobility capacity. The first principle calculation supports that intrinsic defects have low formation energy and contribute to p‐type semiconductors. However, the donor doping develops an electron transport via the impurity compensation effect, significantly enhancing mobility. Moreover, the polar optical phonon‐limited Fröhlich scattering dominates the GaSb scattering process in a low carrier concentration and high operating temperature. This research reveals that the compensation effect can suppress intrinsic and complex defects to improve spectral signature and carrier transport behaviour, which lay a solid foundation for exploiting high‐mobility GaSb and high‐performance GaSb‐based microelectronic chips.