双稳态
激进的
材料科学
氧化还原
分子
共轭体系
苯并噻吩
电阻式触摸屏
光化学
纳米技术
组合化学
计算机科学
光电子学
聚合物
化学
有机化学
冶金
复合材料
计算机视觉
噻吩
作者
Yan Hou,Hanjiao Chen,Wenru Lian,Huaqing Li,Xiaoguang Hu,Xuying Liu
标识
DOI:10.1002/adfm.202306056
摘要
Abstract Radical molecules exhibit fast redox kinetics, are widely explored for data processing and energy storage. However, the insulating aliphatic matrix isolates the radical units, thus resulting in a weak charge transporting ability. Herein, calamitic Blatter radicals (CBR) with highly conductive [1]benzothieno[3,2‐ b ]benzothiophene (BTBT) as the conjugated backbone are designed and synthesized. It is found that bistable redox character associated with large conjugated backbone allows these Blatter radical derivatives to be switched with ON/OFF ratio reaching 10 6 and retention time exceeding 10 4 s in solution processed devices. In addition, these radicals are unveiled to perform tunable, multi‐mode field‐responsive resistance behaviors, including write‐once‐read‐many (WORM), FLASH, and dynamic random access memory (DRAM), by molecular engineering strategy. This finding provides fundamental understanding for charge transferring dynamics and redox‐switching mechanism of radical molecules with respect to electronic applications.
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