材料科学
阳极
无定形固体
化学工程
电介质
化学气相沉积
锂(药物)
氮化硼
薄膜
氮化物
纳米技术
无定形碳
沉积(地质)
金属锂
原子层沉积
硼
集电器
光电子学
电流密度
金属
电池(电)
图层(电子)
作者
Hyeongjoon Kim,Seung‐Hyeok Kim,Zhuangnan Li,Min-Gyun Kim,Bit Na Choi,Naeun Yoon,D. S. Baranov,Kostya S. Novoselov,Manish Chhowalla,Sang‐Young Lee,Hyeon Suk Shin
出处
期刊:Nano Letters
[American Chemical Society]
日期:2025-09-08
卷期号:25 (37): 13850-13856
被引量:1
标识
DOI:10.1021/acs.nanolett.5c03530
摘要
Ultrathin amorphous materials are promising counterparts to 2D crystalline materials, yet their properties and functionalities remain poorly understood. Amorphous boron nitride (aBN) has attracted attention for its ultralow dielectric constant and superior manufacturability compared with hexagonal boron nitride. Here, we demonstrate wafer-scale growth of ultrathin aBN films with exceptional thickness and composition uniformity using capacitively coupled plasma-chemical vapor deposition (CCP-CVD) at 400 °C. Beyond dielectric applications, we reveal an unexpected functionality─serving as an interfacial layer in Li anode current collectors to improve Li plating/stripping reversibility by suppressing dendrite formation and corrosion. aBN-modified Cu current collectors deliver superior cycling stability and capacity retention in large-format Li-S battery pouch cells, with a capacity decay of 0.062% per cycle at N/P = 1.3, seven times lower than that of pristine Cu (0.44%). These findings establish aBN as a scalable, high-performance interfacial material for lithium metal anodes in next-generation energy storage technologies.
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