材料科学
接触电阻
GSM演进的增强数据速率
光电子学
晶体管
薄脆饼
半导体
异质结
平版印刷术
单层
可扩展性
肖特基势垒
纳米技术
计算机科学
电气工程
图层(电子)
人工智能
工程类
电压
二极管
数据库
作者
Seunguk Song,Aram Yoon,Jong-Kwon Ha,Jihoon Yang,Sora Jang,Chloe Leblanc,Jaewon Wang,Yeoseon Sim,Deep Jariwala,Seung Kyu Min,Zonghoon Lee,Soon-Yong Kwon
标识
DOI:10.1038/s41467-022-32582-9
摘要
Abstract The edge-to-edge connected metal-semiconductor junction (MSJ) for two-dimensional (2D) transistors has the potential to reduce the contact length while improving the performance of the devices. However, typical 2D materials are thermally and chemically unstable, which impedes the reproducible achievement of high-quality edge contacts. Here we present a scalable synthetic strategy to fabricate low-resistance edge contacts to atomic transistors using a thermally stable 2D metal, PtTe 2 . The use of PtTe 2 as an epitaxial template enables the lateral growth of monolayer MoS 2 to achieve a PtTe 2 -MoS 2 MSJ with the thinnest possible, seamless atomic interface. The synthesized lateral heterojunction enables the reduced dimensions of Schottky barriers and enhanced carrier injection compared to counterparts composed of a vertical 3D metal contact. Furthermore, facile position-selected growth of PtTe 2 -MoS 2 MSJ arrays using conventional lithography can facilitate the design of device layouts with high processability, while providing low contact resistivity and ultrashort transfer length on wafer scales.
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