电子
物理
价电子
原子轨道
价(化学)
原子物理学
半导体
非线性光学
凝聚态物理
导带
散射
四面体
非线性系统
电子能带结构
热传导
量子力学
化学
结晶学
作者
Sudhanshu S. Jha,N. Bloembergen
出处
期刊:Physical Review
[American Physical Society]
日期:1968-07-15
卷期号:171 (3): 891-898
被引量:198
标识
DOI:10.1103/physrev.171.891
摘要
The contribution of the valence electrons to the nonlinear optical susceptibilities may be estimated on the basis of simple tetrahedral bonding orbitals. The coefficient for second-harmonic generation in III-V compounds is in satisfactory agreement with the theoretical estimate. The same model contributes to the third-order nonlinearity, which describes scattering processes between four light waves. Again reasonable agreement is obtained with data for combination frequency generation in Si and Ge. The much larger effects in $n$-type InAs and InSb are due to conduction electrons. Their contribution has been calculated exactly under the assumption of Kane's theory for the band structure. The contribution of the valence electrons is, however, not negligible.
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