碳纳米管
结晶
纳米管
材料科学
垂直的
金属
Crystal(编程语言)
结晶学
管(容器)
平面(几何)
纳米技术
钾
空格(标点符号)
化学物理
化学工程
化学
复合材料
几何学
程序设计语言
哲学
语言学
计算机科学
工程类
数学
冶金
作者
Wen Kuang Hsu,W.Z. Li,Yan Zhu,Nicole Grobert,Mauricio Terrones,Humberto Terrones,Nanocomposites Yao,J.P. Zhang,Steven Firth,Robin J. H. Clark,Anthony K. Cheetham,Jonathon Hare,Harold W. Kroto,D. R. M. Walton
标识
DOI:10.1016/s0009-2614(99)01347-0
摘要
The arc discharge method has been used hitherto to encapsulate metal-containing structures within carbon nanotubes 1, 2, the arrangement of the nanotube walls playing an important role in the process. We show that KCl can be generated in the space between nanotube walls by treating potassium-intercalated uncapped tubes with CCl4. A relationship between the KCl crystal domain and the hexagonal carbon network is thought to give rise to preferential formation of a 100 plane perpendicular to the tube axes.
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