Cryogenic investigation of gate leakage and RF performances down to 50 K of 0.2 μm AlInAs/GaInAs/InP HEMTs

0.2μm Al0.48In0.52As/Ga0.47In0.53As LMHEMT on InP with an undoped GaInAs layer to reduce gate leakage have been realised and their DC and RF properties have been investigated cryogenic temperatures. The cutoff maximum frequencies oscillation Fmax up to 260 Hz are extrapolated at 50 K from the maximum unilateral gain (MUG) determined using S parameters measured up to 40 GHz. Evolution of gate leakage current and RF characteristics against gate and drain biases are presented between 50 and 300 K.