Nanocrystalline silicon emitter optimization for Si-HJ solar cells: Substrate selectivity and CO2plasma treatment effect

We investigated hydrogenated nanocrystalline silicon (nc-Si:H) films as doped emitter layers for silicon heterojunction solar cells. Firstly, we focused on the effect of the nc-Si:H deposition conditions and film growth on the intrinsic hydrogenated amorphous silicon passivation layer ((i)a-Si:H) underneath. Three different p-doped emitters were compared: nc-Si:H, nc-SiOx:H, and a-Si:H. We found that the nc-Si:H and nc-SiOx:H growth enhances the passivation of the epitaxy-free (i)a-Si:H layer, yielding implied open circuit voltages above 730 mV. Secondly, for (p)nc-Si:H emitters, we observed a trade-off between fill factor (FF) and open circuit voltage (Voc) by using two types of (i)a-Si:H films. A slight epitaxy of the (i)layer seems to promote the rapid nucleation of nc-Si:H, thereby positively affecting the FF (79.5%) and series resistance but reducing Voc (670 mV). Contrarily, on well-passivating (i)a-Si:H the nc-Si:H nucleation is more difficult resulting in S-shaped I–V curves, presumably due to low built-in voltage and a poor emitter/TCO contact. To circumvent this dilemma, a CO2 plasma treatment is used to oxidize the a-Si:H surface before the nc-Si:H emitter deposition thereby enhancing nucleation. Accordingly, a FF of 74.5% with Voc of 727 mV is reached in the best device, yielding a conversion efficiency of 21%. HR-TEM micrograph of the front layer stack of the solar cell. The image shows a region close to the valley between two pyramids. From bottom to top: c-Si substrate, (i)a-Si:H passivation layer showing epitaxially grown regions, (p)nc-Si:H emitter layer, and In2O3:Sn (ITO). Yellow lines highlight layers and individual crystals. Silicon zone axis orientation is <101>.