宽带
共栅
单片微波集成电路
分布式放大器
放大器
电子工程
电气工程
功率(物理)
工程类
电信
射频功率放大器
计算机科学
物理
CMOS芯片
量子力学
标识
DOI:10.1093/ietele/e88-c.7.1353
摘要
This paper presents a cascode-pair distributed amplifier design approach using 0.25 μm GaAs-based PHEMT MMIC technology, which covers 2-32 GHz. Electromagnetic simulation results show that this amplifier achieves 18 dB gain from 2 to 32 GHz and ±0.5 dB gain flatness over the band. The reflected coefficients at the input and output ports are below -lOdB up to 27 GHz. The output power at 1 dB compression is greater than 24dBm at 20 GHz. An appropriate feedback resistance can be utilized to improve P 1dB for about 6 dBm. The DOE (design of experiment) approach is carried out by a simulation tool for better performance and tolerance of the devices is also analyzed. The circuit configuration is capable of operating over ultra-broad band amplification.
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