材料科学
光电子学
光探测
肖特基二极管
肖特基势垒
二极管
光电探测器
响应度
异质结
光电流
量子效率
等离子体子
半导体
带隙
光电二极管
暗电流
比探测率
作者
Ji-Ling Hou,Axel Fischer,Sheng-Chieh Yang,Johannes Benduhn,Johannes Widmer,Daniel Kasemann,Koen Vandewal,Karl Leo
标识
DOI:10.1002/adfm.201601718
摘要
Organic materials for near-infrared (NIR) photodetection are in the focus for developing organic optical-sensing devices. The choice of materials for bulk-type organic photodetectors is limited due to effects like high nonradiative recombination rates for low-gap materials. Here, an organic Schottky barrier photodetector with an integrated plasmonic nanohole electrode is proposed, enabling structure-dependent, sub-bandgap photodetection in the NIR. Photons are detected via internal photoemission (IPE) process over a metal/organic semiconductor Schottky barrier. The efficiency of IPE is improved by exciting localized surface plasmon resonances, which are further enhanced by coupling to an out-of-plane Fabry–Perot cavity within the metal/organic/metal device configuration. The device allows large on/off ratio (>1000) and the selective control of individual pixels by modulating the Schottky barrier height. The concept opens up new design and application possibilities for organic NIR photodetectors.
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