Influence of the Substrate on the Electrophysical Properties of Films from Thin Single-layer Carbon Nanotubes: in silico Research

The electronic and electrophysical properties of mono- and bilayer films of single-walled carbon nanotubes (SWCNTs) located on various types of substrates including substrates in the form of films of crystalline silicon dioxide SiO2 with space symmetry groups P42/mnm and P3121 are studied. It is established that the substrate plays an important role in the formation of the profile of electronic density of states of SWCNT films. It is found that due to the substrate, the quantum capacitance of SWCNT films increases by a factor from 1.6 to 2.2 when a voltage of more than 1 V is applied. It is shown that the presence of a substrate leads to a change in the electrical resistance of monolayer films from 2 to 17%. The electrical resistance of a bilayer film in the presence of a substrate remains practically unchanged in both directions of current transfer and is equal to ~6.4 kΩ, the minimum allowable value for SWCNTs.