材料科学
光学
平版印刷术
极紫外光刻
数值孔径
镜头(地质)
激光器
波长
光电子学
焦距
衍射
光刻
分辨率(逻辑)
纳米柱
光子学
纳米技术
物理
纳米结构
人工智能
计算机科学
作者
Jichao Fu,Mengting Jiang,Zeng Wang,Yi Fan Chen,Yuanda Liu,Qing Yang Steve Wu,Ai Jia Sim,Jiang Wang,Mingxi Chen,Ziyu Wang,Jie Deng,Xiao Song Eric Tang,Kun Huang,Hong Liu,Jinghua Teng
出处
期刊:Opto-electronic science
[Opto-Electronic Advances]
日期:2024-01-01
卷期号:3 (10): 230035-230035
被引量:5
标识
DOI:10.29026/oes.2024.230035
摘要
Supercritical lens (SCL) can break the diffraction limit in the far field and has been demonstrated for high-resolution scanning confocal imaging. Its capability in sharper focusing and needle-like long focal depth should allow high-resolution lithography at violet or ultraviolet (UV) wavelength, however, this has never been experimentally demonstrated. As a proof of concept, in this paper SCLs operating at 405 nm (h-line) wavelength with smaller full-width-at-half-maximum focal spot and longer depth of focus than conventional Fresnel zone lens while maintaining controlled side lobes are designed for direct laser writing (DLW) lithography. Aluminum nitride (AlN) with a high refractive index and low loss in UV-visible range is used to fabricate nanopillar-based metasurfaces structure for the metalens. Grating arrays with improved pitch resolution are fabricated using the SCLs with sub-diffraction-limit focusing capability. The AlN-based metasurface for SCLs at short wavelength for DLW could extend further to UV or deep UV lithography and might be of great interest to both the research and industry applications.
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