GaN-on-Si micro resonant-cavity light-emitting diodes with dielectric and metal mirrors

Micro-LED is a new type of display technology. Its advantages are high resolution, high brightness, long life, low power consumption and so on. However, due to the reduction in size, the proportion of surface damage increases, resulting in a decrease in device performance, which affects the development of Micro-LEDs. In this paper, ion implantation technology and resonant cavity structure are used to reduce device sidewall damage and improve device characteristics. The photoelectric properties of GaN-based blue micro light emitting resonant cavity diodes were studied. Pixel-to-pixel isolation is achieved by fluorine ion implantation. The resonant cavity structure is fabricated by wafer bonding technique. The research shows that the electrical characteristics of the device have realized good stability. Under medium reflectivity conditions, the device enhancement effect is best when the reflectivity of the top mirror is 40%. With the decrease of the size, the enhancement of optical characteristics weakens due to the size effect, and the spontaneous emission intensity of the 10 μm device increases by 212.6%. The FWHM of devices with different sizes narrowed by about 10 nm. The stability of the device peak wavelength and full width at half maximum is improved. Therefore, this paper provides research value for the application of resonant cavity structures in Micro-LEDs.