硫系化合物
掺杂剂
基面
三元运算
兴奋剂
Atom(片上系统)
氢
化学
材料科学
氢原子
结晶学
物理化学
群(周期表)
有机化学
嵌入式系统
程序设计语言
光电子学
计算机科学
标识
DOI:10.1016/j.ijhydene.2023.03.044
摘要
Feasibility of activating the basal planes of a ternary tri-chalcogenide material MnPSe3 towards hydrogen evolution reaction (HER) by internal regulation of substitutional doping is studied using first-principles electronic structure calculations. A fraction of the Mn atoms is replaced by a first– or second–row transition metal atom. While the basal plane of the pristine material is inactive to HER with the change in H adsorption free energy (ΔGH∗) of 1.41 eV, some dopants significantly improve the activity of the planes as deduced from the calculated ΔGH∗ value. Whether such substitutional doping is energetically favored is checked by calculating the formation energy of each of the materials. Activity enhancement at different concentrations of the dopants is also tested. We find that three elements, Sc, Y, and Mo, out of a total of 19, activate the basal planes with ΔGH∗ values of 0.24, 0.18, and 0.23 eV, respectively, raising the possibility of increasing the efficiency of MnPSe3 as an HER catalyst. We also find an interesting correlation between the electronic densities of states of material and the calculated ΔGH∗ values.
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