Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction

Modulation between optical and ferroelectric properties was realized in a lateral structured ferroelectric CuInP 2 S 6 (CIPS)/semiconductor MoS 2 van der Waals heterojunction. The ferroelectric hysteresis loop area was modulated by the optical field. Two types of photodetection properties can be realized in a device by changing the ON and OFF states of the ferroelectric layer. The device was used as a photodetector in the OFF state but not in the ON state. The higher tunnelling electroresistance (∼1.4 × 10 4 ) in a lateral structured ferroelectric tunnelling junction was crucial, and it was analyzed and modulated by the barrier height and width of the ferroelectric CIPS/semiconductor MoS 2 Schottky junction. The new parameter of the ferroelectric hysteresis loop area as a function of light intensity was introduced to analyze the relationship between the ferroelectric and photodetection properties. The proposed device has potential application as an optoelectronic sensory cell in the biological nervous system or as a new type of photodetector.