材料科学
异质结
晶格常数
应力松弛
衍射
透射电子显微镜
带隙
扫描透射电子显微镜
堆栈(抽象数据类型)
光谱学
电子迁移率
光电子学
分析化学(期刊)
纳米技术
光学
复合材料
化学
色谱法
蠕动
物理
计算机科学
程序设计语言
量子力学
作者
Florian Castioni,Loïc Henry,Lara Casiez,Nicolas Bernier,Vincent Reboud,Jérémie Chrétien,N. Pauc,V. Calvo,Jérôme Richy,Audrey Jannaud,V. Delaye,Éric Robin,Jean‐Michel Hartmann,Pascale Bayle‐Guillemaud
摘要
The structural properties of CVD-grown (Si)GeSn heterostructures were assessed thanks to scanning transmission electron microscopy at the nanometer scale. Quantitative energy dispersive x-ray (EDX) spectroscopy together with precession electron diffraction and geometrical phase analysis (GPA) were performed to probe the chemical and structural properties of the different layers. Results presented in this paper demonstrated the advantages of a multilayer structure, with successive layers grown at decreasing temperatures in order to gradually accommodate the in-plane lattice parameter and incorporate more and more Sn into the stack. It was shown how the GeSn emissive layer could be manufactured with low plastic deformation and a high relaxation rate, necessary for better light emission performances. SiGeSn alloys used as confinement barriers around the emissive layer were also investigated. For such thin layers, we showed the importance of the starting lattice parameter (SLP) prior to the growth on their composition. Indeed, higher SLPs resulted, for the very same process conditions, into higher Sn contents and lower Si contents. The interest in combining EDX, which was accurate enough to detect slight chemical concentration variations, and GPA, for local strain analyses, was clearly demonstrated. Present results will be very useful to predict and control the bandgap and structural quality of (Si)GeSn materials and, in turn, device properties.
科研通智能强力驱动
Strongly Powered by AbleSci AI