材料科学
纳米线
薄脆饼
阳极氧化
集成电路
制作
硅
光电子学
各向异性
纳米技术
铝
复合材料
光学
医学
替代医学
物理
病理
作者
Allison Harpel,Joseph Um,Aditya Dave,Yali Zhang,Nikita Mahjabeen,Yicong Chen,Rashaunda Henderson,Rhonda Franklin,Bethanie J. H. Stadler
标识
DOI:10.1109/tmag.2022.3218696
摘要
Vertically integrated copper (Cu) and nickel (Ni) nanowires (NWS) were fabricated on silicon using anodized aluminum oxide (AAO) thin film templates integrated onto silicon wafers. Both the AAO and NWs were mechanically robust and demonstrated to withstand further fabrication processes used for integrated circuits. The AAO pores were measured to be ~30 nm with size distributions narrowing from ±12 to ±6 nm after a second anodization. The NWs, therefore, had similar diameters and distributions inside these integrated AAO films. Magnetic hysteresis loops demonstrated the out-of-plane anisotropy of the vertically oriented Ni wires in the presence of pore outgrowth that had in-plane anisotropy. When used as vias and integrated with coplanar waveguides (CPWs), the Cu NWs had lower losses than standard vias above 60 GHz.
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