材料科学
氮化物
薄脆饼
光电子学
吸收(声学)
铝
透明度(行为)
氮化铝
纳米技术
复合材料
图层(电子)
政治学
法学
作者
Rafael Dalmau,Samuel Kirby,J. Britt,R. Schlesser
标识
DOI:10.1002/pssb.202300482
摘要
Large‐diameter, single‐crystalline aluminum nitride (AlN) substrates are sought for growth of AlGaN‐based devices. A combination of high crystalline perfection and optical transparency is desired for UV‐C emitter applications. A mapping analysis of 2‐in. AlN substrates grown by physical vapor transport is performed to study the within‐wafer uniformity of structural and optical properties. Substrates with spatially uniform crystalline perfection and UV‐C absorption coefficients, as determined by typical X‐ray rocking curve widths below 15 arcsec and 4.68 eV absorption coefficients below 20 cm −1 , are shown. These findings demonstrate a robust mass production process for high‐quality, 2 in. AlN substrates possessing uniform structural and UV optical properties, making them highly suited for growth of next‐generation, AlGaN‐based devices.
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