分子动力学
碳化硅
辐射损伤
统计物理学
硅
原子间势
材料科学
流离失所(心理学)
从头算
辐照
分子物理学
化学
计算化学
物理
量子力学
光电子学
复合材料
心理治疗师
心理学
作者
Yong Liu,Hao Wang,Linxin Guo,Zhanfeng Yan,Jian Zheng,Wei Zhou,Jianming Xue
标识
DOI:10.1016/j.commatsci.2023.112693
摘要
We developed and validated an accurate inter-atomic potential for molecular dynamics simulation in cubic silicon carbide (3C-SiC) using a deep learning framework combined with smooth Ziegler–Biersack–Littmark (ZBL) screened nuclear repulsion potential interpolation. Comparisons of multiple important properties were made between the deep-learning potential and existing analytical potentials which are most commonly used in molecular dynamics simulations of 3C-SiC. Not only for equilibrium properties but also for significant properties of radiation damage such as defect formation energies and threshold displacement energies, our deep-learning potential gave closer predictions to the DFT criterion than analytical potentials. The deep-learning potential framework solved the long-standing dilemma that traditional empirical potentials currently applied in 3C-SiC radiation damage simulations gave large disparities with each other and were inconsistent with ab initio calculations. A more realistic depiction of the primary irradiation damage process in 3C-SiC can be given and the accuracy of classical molecular dynamics simulation for cubic silicon carbide can be expected to the level of quantum mechanics.
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