Preparation of Memristor and Research of Resistance-Change Mechanisms

The memristor, a recently developed electronic component, has the potential to address the limitations of data processing and storage in traditional von Neumann architecture computers. It is a promising substitute for traditional CMOS components in artificial neural networks due to its distinctive low power consumption, rapid response time, and non-volatile memory characteristics. The precise nature of the resistive change mechanism of the memristor remains unclear. The majority of research to date has focused on three main mechanisms: ionic, electronic and thermal. In regard to the selection of materials, the electrode components of memristors may be composed of metals, carbon-based materials, or conductive oxides, which possess the capacity to carry the current and engage in the resistive reaction. Memristors display a multitude of prospective applications in the field of memory devices and brain-like computing systems, given their superior characteristics. For instance, organic memristors may be employed in the biomedical sector for the production of wearable devices, given their affordability, simplicity of fabrication and biocompatibility. Furthermore, inorganic and organic materials can be combined, which is anticipated to facilitate the development of memristors with enhanced performance. These developments underscore the significance of memristors in next-generation computing and storage technologies