Research on the customization of IGCT driver chip

Integrated Gate Commutated Thyristor (IGCT) gate driver unit (GDU) is the key hub of secondary control systems and primary high-voltage and high-current power devices. However, the utilization of discrete devices in the driver design presents several drawbacks, including numerous components, limited electromagnetic immunity, reduced reliability, and increased power consumption. Consequently, the trend towards chipization in the advancement of IGCT drive technology is deemed inevitable. Due to the high level of integration required for digital-analog-power hybridization, the development of IGCT driver chips faces substantial hurdles, with current research efforts lacking both domestically and internationally. The study focuses on the customization research of IGCT gate driver chips, exploring their operational parameters and external constraints within the domain of energy and power applications. Subsequently, the architecture design and characteristic requirements of power specific integrated circuits (PSIC) are delineated, encompassing aspects such as functional module division, power sequencing, cross-domain ESD comprehensive protection schemes, and chip parameter definitions. Finally, a comprehensive layout floorplan strategy of the entire chip is conducted, considering area utilization, power distribution, and signal integrity. This paper contributes to the advancement of customized PSICs by providing insights and references within this realm.