非阻塞I/O
原子层沉积
材料科学
薄膜
三乙胺
蚀刻(微加工)
氧气
检出限
等离子体刻蚀
光电子学
等离子体
图层(电子)
氧化物
半导体
分析化学(期刊)
纳米技术
催化作用
化学
冶金
量子力学
物理
有机化学
生物化学
色谱法
作者
Hongyin Pan,Chenyu Wang,Zexu Zhang,Yingying Li,Xinke Hou,Wei Zheng,Xianghong Liu,Yong Wan,Jun Zhang
摘要
p-type metal oxide semiconductors have received significant interest in the field of gas sensors; however, it is quite challenging to achieve high sensor response because of inferior surface and electronic properties. Herein, we report a high-performance gas sensor fabricated by plasma-etching an NiO thin film deposited by atomic layer deposition. Ar plasma treatment is found to introduce a large number of oxygen vacancies, which effectively adjusts the electronic and chemical characteristics of the p-type NiO films to afford improved response to toxic triethylamine. The effects of the thickness of the sensing layer on sensor properties are also studied, which reveals that the NiO film with a thickness of 40 nm has the greatest gas sensing performance. After Ar plasma treatment, the response of the NiO thin films is significantly enhanced to enable an excellent limit of detection of 27.4 ppb, which is much lower than the threshold limit of 1 ppm proposed by American Conference of Governmental Industrial Hygienists. The demonstrated strategy and excellent sensor properties suggest a pathway to high performance gas sensors.
科研通智能强力驱动
Strongly Powered by AbleSci AI