Analysis of nonlinear large signal intrinsic elements for InGaP/GaAs HBT based on Gummel‐Poon model

Abstract A large signal analysis method based on Gummel‐Poon model is proposed to predict nonlinear behavior of InGaP/GaAs HBT. A 2 × 20 μm 2 transistor is fabricated with InGaP/GaAs HBT technology. The large signal transconductance G m , conductance G be , and capacitance C BE , C BC are calculated based on the proposed method and measured using a RF testing probe. The calculated and measured results show good consistency up to nonlinear power level. The proposed method is applied to analyze variations of nonlinear large signal intrinsic elements of this transistor with increasing power under different bias conditions, in order to raise benefit of nonlinear consideration for power amplifiers.