Enhanced Performance of MgZnO/ZnO Dual-band UV Photodetectors Depend on depletion region with different electrode width

Abstract In this work, visible-blind dual-band UV photodetectors with different interdigital electrode width were fabricated on MgZnO/ZnO bilayer film by the radio frequency (RF) magnetron sputtering technique. The devices exhibit excellent photo-response at 320 nm and 360 nm, respectively. Meanwhile, the PD with larger electrode width possesses higher photo- response and lower dark current (Id), which proved that the wider electrode is more favourable to enhance the performance of PDs. The result is originate from the stronger electric filed on the depletion region related to the electrode width. This demonstrates a facile way to fabricate dual-band UV PDs with high properties for practice application.