Analysis on the application, development, and future prospects of Gallium Nitride (GaN)

The paper uses secondary research to investigate various constructs and functional structures of GaN as a thirdgeneration semiconductor. A brief history of semiconductors is provided in terms of the generations that they occur. GaN was introduced in the 1990s, but its utility evolved until the 21st century. At the advent of its invention, Silicon (Si) and germanium (Ge) had been the most commonly used semiconductors. GaN presented unique advantages ranging from cost to size and utility. This was the frontier of new applications of semiconductors. The largest applications of GaN have been in LEDs, transducers, and transistors. GaN also has its limitations, which include its generally immobile energy band, and its substrate incompatibility. The future of GaN can be projected by factoring three main variables. These are cost, application/utility, and limitations.