The SCAPS-1D modeling of ZnO/CdS/CdTe thin film: analysis of thickness and stoichiometric fraction of absorber layer on solar cell performance

Abstract Modeling of ZnO/CdS/CdTe solar cells with various thickness and stochiometric fractions has been carried out using SCAPS-1D. The variation in the thickness of the CdTe used was 0.6 μm - 6.0 μm and the variation of the stoichiometric fraction used was 0.6 - 7.0. The SCAPS-1D modeling data were characterized using I-V characteristics to determine the value of V oc , J sc , FF and their efficiency. The I-V characteristic values increased with the increase in the thickness of CdTe. The optimum thickness was 6.0 μm with V oc , J sc , FF values, respectively 0.894 volts; 31,990 mA/cm 2 ; and 84.720%, with a large efficiency of 24.228%. In the variation of the optimum stoichiometric fraction, the stoichiometric fraction was 0.6 with an energy gap of 1.486 eV and an efficiency value of 22.900% for the V oc , J sc , and FF values, respectively, 0.872 volts; 31,345 mA/cm 2 ; 83,806%.