材料科学
单层
钼
带隙
过渡金属
图层(电子)
二硫化钼
硫黄
直接和间接带隙
纳米技术
分析化学(期刊)
光电子学
冶金
有机化学
化学
催化作用
作者
John Mann,Quan Ma,Patrick Odenthal,Miguel Isarraraz,Duy Le,Edwin Preciado,David Barroso,Koichi Yamaguchi,Gretel von Son Palacio,Andrew Nguyen,Tai Tran,Michelle Wurch,Ariana E. Nguyen,Velveth Klee,Sarah Bobek,Dezheng Sun,Tony F. Heinz,Talat S. Rahman,Roland Kawakami,Ludwig Bartels
标识
DOI:10.1002/adma.201304389
摘要
MoS2(1−x) Se2x single-layer films are prepared using a mixture of organic selenium and sulfur precursors as well as a solid molybdenum source. The direct bandgaps are found to scale nearly linearly with composition in the range of 1.87 eV (pure single-layer MoS2) to 1.55 eV (pure single-layer MoSe2) permitting straightforward bandgap engineering.
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