材料科学
电介质
光电子学
栅极电介质
分子束外延
砷化镓
薄膜
场效应晶体管
透射电子显微镜
泄漏(经济)
分析化学(期刊)
晶体管
外延
图层(电子)
纳米技术
电气工程
电压
化学
经济
宏观经济学
工程类
色谱法
作者
T. S. Lay,M. Hong,J. P. Mannáerts,C. T. Liu,J. Raynien Kwo,F. Ren,Matthew A. Marcus,K.K. Ng,Young-Kai Chen,Li‐Jen Chou,K. C. Hsieh,Keh-Yung Cheng
摘要
The novel deposition technique of Ga2O3(Gd2O3) film by using in-situ molecular beam epitaxy (MBE) has led to the first demonstration of enhancement mode GaAs metal oxide semiconductor field effect transistors. For sub- micron GaAs device applications, the current leakage in the gate dielectric of reduced thickness has been an important issue. In this work, we address this aspect for the Ga2O3(Gd2O3) thin films deposited on n-type GaAs and present the electrical characteristics of the GaAs MOS structures as a function of the gate dielectric thickness, varying from 16.6 nm to 7.7 nm. The as-deposited thin dielectric layers show, in dark an inversion layer formation as well as an excellent insulator performance: a gate leakage current density as low as 10-9 A/cm2 at low gate bias up to 2.5 V and the electrical breakdown field reaches above 10 MV/cm. The high resolution transmission electron microscopy measurements show a sharp and uniform dielectric/GaAs transition with interfacial roughness < 1 nm.
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