无定形固体
材料科学
高分辨率透射电子显微镜
扩展X射线吸收精细结构
透射电子显微镜
电子衍射
结晶学
衍射
吸收(声学)
分析化学(期刊)
化学物理
吸收光谱法
纳米技术
光学
化学
有机化学
复合材料
物理
作者
D. Bruce Buchholz,Qing Ma,Diego Alducin,Arturo Ponce,Miguel José‐Yacamán,Rabi Khanal,Julia E. Medvedeva,Robert P. H. Chang
摘要
A series of In2O3 thin films, ranging from X-ray diffraction amorphous to highly crystalline, were grown on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature. The amorphous-to-crystalline transition and the structure of amorphous In2O3 were investigated by grazing angle X-ray diffraction (GIXRD), Hall transport measurement, high resolution transmission electron microscopy (HRTEM), electron diffraction, extended X-ray absorption fine structure (EXAFS), and ab initio molecular dynamics (MD) liquid-quench simulation. On the basis of excellent agreement between the EXAFS and MD results, a model of the amorphous oxide structure as a network of InO x polyhedra was constructed. Mechanisms for the transport properties observed in the crystalline, amorphous-to-crystalline, and amorphous deposition regions are presented, highlighting a unique structure-property relationship.
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