X射线光电子能谱
真空度
带材弯曲
紫外光电子能谱
结合能
费米能级
材料科学
富勒烯
分析化学(期刊)
光电发射光谱学
光谱学
原子物理学
电子结构
紫外线
轨道能级差
偶极子
化学
电子
分子
光电子学
核磁共振
物理
计算化学
有机化学
量子力学
色谱法
作者
Jung Hwa Seo,Seongsoo Kang,Chang Sik Kim,K-H Yoo,C. N. Whang
标识
DOI:10.1088/0953-8984/18/33/s21
摘要
The energy level alignment at the interface between fullerene (C60) and Co has been determined by x-ray and ultraviolet photoelectron spectroscopy. To investigate the interfacial electronic structure, a C60 layer was deposited on a clean Co surface in a stepwise manner. The measured onset of the highest occupied molecular orbital energy level was at 1.54 eV from the Fermi level of Co. The vacuum level was shifted 0.41 eV toward lower binding energy with the additional C60 layers, which means that an interface dipole exists at the interface between C60 and Co. The C 1s spectra show that band bending occurs at the interface between C60 and Co. These results indicate that the barrier height of the hole injection from Co to C60 is 1.14 eV, which is a smaller value than that for electron injection (1.46 eV).
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