二氯硅烷
外延
增长率
材料科学
化学气相沉积
蚀刻(微加工)
沉积(地质)
体积流量
化学工程
光电子学
纳米技术
硅
图层(电子)
生物
沉积物
数学
古生物学
工程类
物理
几何学
量子力学
作者
Haizheng Song,Tawhid Rana,M. V. S. Chandrashekhar,Sabih U. Omar,Tangali S. Sudarshan
出处
期刊:ECS transactions
[The Electrochemical Society]
日期:2013-08-31
卷期号:58 (4): 97-109
被引量:4
标识
DOI:10.1149/05804.0097ecst
摘要
As a novel Si-precursor in chemical vapor deposition epitaxial growth of 4H-SiC, tetrafluorosilane (TFS) is studied for both its advantages and disadvantages. Due to its high Si-F binding energy, TFS presents exceptional ability in the suppression of parasitic deposition and Si-droplet formation during SiC epitaxial growth. As compared with epigrowth using a chlorinated precursor, dichlorosilane (DCS), growth using TFS shows a lower growth rate most likely due to the TFS etching of SiC during growth and the lower reactivity of TFS, but the quality of the TFS grown epilayers is always superior. Epigrowth using TFS also shows better control of the uniformities of epilayer surface morphology and doping concentration, which offers excellent uniformity of SiC device performance. The influence of growth conditions including temperature, gas flow rate, Si/H 2 ratio, and C/Si ratio on growth rate and epilayer properties is investigated in growth using TFS and compared with growth using DCS.
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