神经形态工程学
材料科学
电解质
离子
晶体管
俘获
电极
光电子学
纳米技术
人工神经网络
计算机科学
物理
电压
人工智能
生物
量子力学
生态学
作者
Minho Jin,Haeyeon Lee,Churl Hyun Im,Hyun‐Jae Na,Jae Hak Lee,Won Hyung Lee,Junghyup Han,Eungkyu Lee,Jun‐Woo Park,Youn Sang Kim
标识
DOI:10.1002/adfm.202201048
摘要
Abstract Li + electrolyte‐gated transistors (EGTs) have received much attention as artificial synapses for neuromorphic computing. EGTs, however, have been still challenging to achieve long‐term synaptic plasticity, which should be linearly and symmetrically controlled with the magnitude of electrical potential at the gate electrode. Herein, a fluoroalkylsilane (FAS) self‐assembled monolayer (SAM) is introduced as a channel‐electrolyte interlayer with the function of sequential ion‐trapping in Li + EGTs. It is demonstrated that the retention of Li + ions can be enhanced, resulting in stable non‐volatile channel conductance update with high fidelity, linearity, and symmetry in EGTs treated with FAS with 5 fluoroalkyl chains. Through investigating electrical analysis and chemical analysis, it is verified that fluoroalkyl chains enable the sequential ion‐trapping at the channel‐electrolyte interface by coulombic attraction between Li + ions and fluorocarbons. Simulations of artificial neural networks using 20 × 20 digits show FAS‐treated EGTs are suitable as artificial synapses with an accuracy of 89.71% by identical gate pulses and 91.97% by non‐identical gate pulses. A methodological approach is newly introduced for developing synaptic devices based on EGTs for neuromorphic computing with high fidelity.
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