材料科学
氧化物
陶瓷
钼
硅
方位(导航)
比例(比率)
化学工程
碳化硅
冶金
物理
地图学
量子力学
工程类
地理
作者
Carmen Carney,Thomas S. Key
出处
期刊:Ceramic engineering and science proceedings
日期:2014-12-19
卷期号:: 259-273
被引量:11
标识
DOI:10.1002/9781119040293.ch23
摘要
Oxidation resistance tests were conducted on HfB2-SiC and HfB2-MoSi2 samples using direct electrical resistance heating at 1750, 1950 and 2490°C. Analysis of the formed oxide scales showed a distinct difference between the two silicon bearing additives to HfB2. SiC formed a layered oxide scale of HfO2 and SiO2, offering oxidation protection at 1750°C and a nonadherent scale at 1950°C. MoSi2 promotes a mixed scale of SiO2, HfO2, and molybdenum oxides and borides at all temperatures that remained adherent to the bulk up to 2490°C. Comparison and evaluation of oxide scales showed the improved adherence performance of HfB2-MoSi2 when compared to HfB2-SiC.
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