Contact‐Engineered Oxide Memtransistors for Homeostasis‐Based High‐Linearity and Precision Neuromorphic Computing

Abstract Homeostasis is essential in biological neural networks, optimizing information processing and experience‐dependent learning by maintaining the balance of neuronal activity. However, conventional two‐terminal memristors have limitations in implementing homeostatic functions due to the absence of global regulation ability. Here, three‐terminal oxide memtransistor‐based homeostatic synapses are demonstrated to perform highly linear synaptic weight update and enhanced accuracy in neuromorphic computing. Particularly, by leveraging the gate control of contact‐engineered indium‐gallium‐zinc‐oxide (IGZO) memtransistor, synaptic weight scaling is enabled for high‐linearity and precision neuromorphic computing. Moreover, sinusoidal control of gate voltage is demonstrated, possibly enabling the emulation of higher‐order synaptic functions. The device structure of IGZO memtransistor is optimized regarding the source/drain electrode materials and an interfacial layer inserted between the IGZO channel and source electrode. As a result, memtransistors exhibiting high current switching ratio of >10 4 and reliable endurance characteristics are obtained. Furthermore, through the adaptation of synaptic scaling, emulating the homeostasis, non‐linearity values of 0.01 and −0.01 are achieved for potentiation and depression, respectively, exhibiting a recognition accuracy of 91.77% for digit images. It is envisioned that the contact‐engineered IGZO memtransistors hold significant promise for implementing the homeostasis in neuromorphic computing for high linearity and high efficiency.