抛光
材料科学
表面粗糙度
磨料
化学机械平面化
铌酸锂
表面光洁度
复合材料
光学
光电子学
物理
作者
X. Zhang,Jianfeng Bao,Yagang Feng,Z.C. Li,Der‐Ching Yang
摘要
This study aims to optimize the Chemical Mechanical Polishing (CMP) process for polishing the end face of Lithium Niobate on Insulator (LNOI) devices to improve device performance and power transmission. LNOI devices are widely used in microwave signal processing, but high-quality end-face polishing is crucial to minimize optical coupling loss and maximize power transmission. A single-factor experimental technique was employed to optimize the CMP process parameters and determine the most effective polishing solution and parameters. Parameters such as load pressure, abrasive ratio, polishing solution flow rate, main disc speed, and transverse disc speed were optimized, resulting in a low surface roughness of the LNOI end-face. The experiment identified that using a cast iron disc for thinning the waveguide end-face, followed by a polyurethane disc for fine polishing, achieved the optimal polishing effect. The abrasive used was silica with a 15 wt% concentration, applying a pressure of 17.2 kPa, a main disc speed of 20 rpm, a polishing solution flow rate of 3 ml/min, and a transverse speed of ten times/min for six hours. Surface morphology analysis revealed that the optimized CMP process successfully reduced the surface roughness of the LNOI device from several hundred nanometers to 0.214 nm, resulting in improved optical performance and power transmission. The material removal rate achieved under these parameters was approximately 60 nm/min. This study provides valuable insights for the CMP polishing of other materials and offers guidance for future research in this area.
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