电场
半导体
带隙
材料科学
垂直的
光电子学
凝聚态物理
双层石墨烯
双层
石墨烯
纳米技术
物理
化学
生物化学
膜
量子力学
数学
几何学
作者
Daniil Domaretskiy,Marc Philippi,Marco Gibertini,Nicolas Ubrig,Ignacio Gutiérrez-Lezama,Alberto F. Morpurgo
标识
DOI:10.1038/s41565-022-01183-4
摘要
Perpendicular electric fields can tune the electronic band structure of atomically thin semiconductors. In bilayer graphene, which is an intrinsic zero-gap semiconductor, a perpendicular electric field opens a finite bandgap. So far, however, the same principle could not be applied to control the properties of a broader class of 2D materials because the required electric fields are beyond reach in current devices. To overcome this limitation, we design double ionic gated transistors that enable the application of large electric fields of up to 3 V nm-1. Using such devices, we continuously suppress the bandgap of few-layer semiconducting transition metal dichalcogenides (that is, bilayer to heptalayer WSe2) from 1.6 V to zero. Our results illustrate an excellent level of control of the band structure of 2D semiconductors.
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