非阻塞I/O
氧化镍
材料科学
异质结
分析化学(期刊)
二极管
兴奋剂
锂(药物)
镓
氧化物
光电子学
化学
冶金
催化作用
内分泌学
医学
生物化学
色谱法
作者
Katsunori Danno,Motohisa Kado,Toshimasa Hara,Tatsuki Takasugi,Hayate Yamano,Yusuke Umetani,Tetsuya Shoji
标识
DOI:10.35848/1347-4065/acb2d7
摘要
Abstract Critical electric fields ( E C ) of lithium-doped p + -nickel oxide (NiO) were investigated by the capacitance ( C )–voltage ( V ) and current ( I )– V measurements using p + -NiO/n + -gallium oxide (Ga 2 O 3 ) heterojunction diodes. The E C was estimated by device simulations using the net acceptor concentrations ( N A ) obtained from C–V measurements and breakdown voltages obtained from reverse I–V characteristics. The E C of NiO depended on the N A of the NiO and ranged from 5.4 to 10.1 MV cm −1 . Large E C was obtained for high N A . NiO was confirmed to be one of the promising p-type oxides to realize high-power p-n heterojunction devices with Ga 2 O 3 due to the high E C .
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