High-Performance Flexible Solution-Processed Organic Nonvolatile Memory Transistors

In this work, high-performance flexible solution-processed nonvolatile memory based on organic field-effect transistor (OFET-NVM) is reported. These flexible OFET-NVMs with P(VDF-TrFE) as a gate dielectric exhibited excellent memory behavior with high memory window (MW) of 12 V for ${V}_{\text {GS}}$ sweep of ±15 V and drain operating voltages ( ${V}_{\text {DS}}{)}$ of −5 V. This performance was supported by large remnant polarization in P(VDF-TrFE) confirmed through polarization versus applied voltage ( ${P}$ – ${V}{)}$ hysteresis loop. Moreover, these devices show stable retention capability for higher than $10^{4}$ s with memory ${I}_{\text {on}}/{I}_{\text {off}} \sim 10^{3}$ as demonstrated for 100 continues cycles. Moreover, the memory performance for these OFET-NVMs was intact even after continuous dynamic retention for 500 cycles indicating high reliability of operation. Even after application of 100 repeated bending cycles, devices exhibited fairly stable and reliable NVM behavior. Although a minimal deterioration in performance was observed upon bending, the results are remarkable for solution-processed flexible OFET-NVMs with P(VDF-TrFE) considering the low drain operating voltages. The overall high performance makes these devices excellent candidates for further exploration for flexible electronics.