自旋电子学
拓扑绝缘体
拓扑序
拓扑(电路)
凝聚态物理
物理
相图
联轴节(管道)
半金属
相变
Weyl半金属
T对称
对称(几何)
量子反常霍尔效应
量子
点反射
对称保护拓扑序
相(物质)
临界现象
拓扑简并
霍尔效应
量子霍尔效应
量子相变
理论物理学
量子自旋霍尔效应
几何相位
电子系统
作者
Ningjing Yang,Zhigao Huang,Jian‐Min Zhang
出处
期刊:Nano Letters
[American Chemical Society]
日期:2025-10-20
卷期号:25 (43): 15495-15500
标识
DOI:10.1021/acs.nanolett.5c03191
摘要
Recent progress in spintronics within the paradigm of altermagnets (AMs) opens new avenues for next-generation electronic device design. Here, we establish a spin-corner locking mechanism that generates second-order topological states in two-dimensional (2D) altermagnetic systems through effective model analysis. Remarkably, the breaking of Mxy symmetry under uniaxial strain creates spin-resolved corner modes, driving the system into a corner-polarized second-order topological insulator (CPSOTI). Beyond critical strain, a topological phase transition to a quantum anomalous Hall insulator occurs with quantized conductance. Through first-principles calculations, we identify two experimentally viable candidates for 2D intrinsic AM CrO and Cr2Se2O, which host robust CPSOTI. Moreover, we construct the topological phase diagram of CrO and predict the existence of an altermagnetic Weyl semimetal phase. Our findings open technological avenues in altermagnetism and higher order topology while providing opportunities for coupling topological spintronics with cornertronics.
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