0.3-6GHz 10W Ultra Wideband Power Amplifier

This letter introduces an ultra-wideband power amplifier developed based on$0.25 \mu \mathrm{m}$GaN HEMT process with an operating frequency band of$0.3 \sim 6 \text{GHz}$. The power amplifier adopts a non-uniform distributed structure to achieve ultrawideband performance, and achieves large output power. The schematic diagram and layout are simulated and optimized to ensure that the power amplifier chip can achieve high output power and power added efficiency in an ultra-wide frequency band. The measured results show that the chip has a small signal gain greater than 16 dB, a gain flatness of 0.5 dB, a large signal gain greater than 10 dB, an output power greater than 40 dBm, a power added efficiency (PAE) greater than 35 % in the frequency band of$0.3 \sim 6 \text{GHz}$. The operating voltage is 28 V, and the chip area is$3.25 \text{mm} \times 2.30 \text{mm}$.