Surface Potential Analysis of Dual Material Gate Silicon-Based Ferroelectric TFET for Biosensing Application

By means of a dielectric modulation method, this research offers the first ever 2D analytical model for the surface potential of a dual material gate Ferroelectric-TFET (DMG-Fe-TFET) device used in an enzyme-free biosensor. Compared to a device with a single material gate, the sensitivity of a device with a gate made of two distinct metals (M1-M2) is improved by an increase in tunnelling width at the secondary tunnelling junction. This model accounts for the change in surface potential caused by varying the value, position, and fill factor of the target biomolecules. Several distinct device architectures are used to enhance the efficiency of the envisaged Fe-TFET in the nanoscale range. We also investigated how the dimensions of the Nano cavity and other parts of the device affect its sensitivity. In addition, simulation findings using the SILVACO Atlas platform are used to confirm the results obtained when testing the DMG Fe-TFET’s sensitivity in comparison to other recently manufactured FETs.