材料科学
异质结
兴奋剂
分析化学(期刊)
退火(玻璃)
溅射沉积
基质(水族馆)
光致发光
薄膜
单斜晶系
溅射
光电子学
结晶学
晶体结构
纳米技术
化学
海洋学
地质学
复合材料
色谱法
作者
Rajib Saha,Sangita Bhowmick,Madhuri Mishra,Ankita Sengupta,Sanatan Chattopadhyay,Subhananda Chakrabarti
摘要
In the current study, we report the growth of rare earth Er-doped Ga2O3 nanostructures on Ga2O3- seeded Si substrate by employing chemical bath deposition (CBD) and RF magnetron sputtering techniques. A thin layer (~50 nm) of Ga2O3 is deposited on p-Si substrate with the optimize deposition temperature and Ar:O2 flow rate to create a favourable template for growing high quality nanostructures on it. After growing the Er-doped Ga2O3 nanostructures, thermal annealing is performed at 800°C to achieve thermodynamically stable β-phase of Ga2O3. The effect of Er doping on structural, optical and luminescence properties of Ga2O3 nanostructures has been successfully investigated by employing FEGSEM, XRD, UV-VIS and PL. XRD studies confirms the polycrystalline β-phase monoclinic structure of Ga2O3 for both undoped and Er-doped nanostructures with dominant <-111> plane. Top view images of FEGSEM depict the large area growth of rod/wire like structures of Ga2O3 on thin Ga2O3 deposited Si substrate and confirm the formation of heterojunction between Ga2O3 and Si. Deconvoluted PL spectra shows two broad peaks within the wavelength range of 260 nm to 460 nm, which are associated with near band emission and three different types of oxygen vacancies present in β-Ga2O3, respectively. The change in optical absorbance and corresponding energy band gap of undoped and Er-doped nanostructures are analysed in detail by using UV-VIS spectroscopy and such energy bandgap values lie with the range of 4.4 eV-4.7 eV. Finally, current-voltage characteristics of undoped and Er-doped Ga2O3/Si heterojunction has been studied and such heterojunctions can be a potential candidate for the fabrication of several optoelectronic devices as well as high power applications.
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