Nonvolatile Ternary Memory Devices Based on MoO3 Nanoparticles Embedded in Conjugated Copolymer with Hierarchy Charge Traps

A D–A conjugated polymer was used in fabrication of memory devices. However, devices using polymers as active layers alone do not lead to satisfactory results. In this paper, we have synthesized a donor–acceptor conjugated polymer by the Suzuki coupling reaction. The memory devices prepared by the polymer exhibit a ternary memory behavior. MoO3 nanoparticles have a large number of oxygen vacancies on their surface that can act as charge traps. MoO3 nanoparticles (NPs) are mixed with polymers to prepare memory devices for improved memory performance. The relationship between the mass percentage of MoO3 NPs and the storage performance and mechanism of the storage device is studied. The first and second threshold voltages of the memory device are −0.5 and −0.75 V, respectively. A current ratio of 1:102.14:104.75 for the "0″, "1", and "2" resistance states of the device indicates a low probability of read/write errors. This work shows that polymer-embedded nanoparticle materials have practical application value in the field of next-generation nonvolatile memories.