肖特基势垒
表面光电压
材料科学
肖特基二极管
光电子学
开路电压
能量转换效率
分析化学(期刊)
化学
电压
电气工程
物理
工程类
二极管
量子力学
色谱法
光谱学
作者
Kiichi Kamimura,Toshihide Suzuki,Akio Kunioka
标识
DOI:10.7567/jjaps.19s2.203
摘要
InP Schottky barrier solar cells are fabricated and the device parameters are measured under solar illumination. The barrier height of n-InP Schottky contact increases by surface oxidation in wet O 2 atmosphere. The oxidation time can be decreased by surface treatment with bromine water. No surface oxidation is carried out for p-type sample. The maximum open circuit photovoltage and the maximum energy conversion efficiency are 0.59 V and 6.9% for n-type sample and are 0.69 V and 5.6% for p-type sample.
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