异质结
化学气相沉积
X射线光电子能谱
材料科学
光电子学
单层
电子能带结构
制作
价带
带隙
纳米技术
凝聚态物理
核磁共振
物理
病理
医学
替代医学
作者
Wenjia Wang,Kuilong Li,Yang Wang,Wen Jiang,Xingyu Liu,Qing Han
摘要
In this work, large-area continuous monolayer-MoS2 and triple-layer-PtSe2 films are grown on Si substrates by chemical vapor deposition and the MoS2/PtSe2 heterostructures are fabricated using transfer technology. The energy band alignment at the heterojunction is investigated by employing x-ray photoelectron spectroscopy measurements, indicating a type-I band formed at the interface. The conduction and valence band offsets are determined to be 0.85 eV and 0.66 eV, respectively, which is consistent with the results deduced from the electron affinity. Furthermore, the enhancing improvement of light absorption in the visible region implies that this heterostructure has great potential in optoelectronic applications. This study provides promising guidance for the related device design and fabrication.
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