材料科学
极限抗拉强度
光电子学
吸收(声学)
外延
相(物质)
复合材料
光学
化学
物理
有机化学
图层(电子)
作者
Samerkhae Jongthammanurak,J.F. Liu,Kazumi Wada,D.D. Cannon,David T. Danielson,Dong Pan,Jürgen Michel,Lionel C. Kimerling
标识
DOI:10.1109/group4.2006.1708156
摘要
We report the observation of an enhanced electro-optic effect in the weakly absorbing regime for tensile strained Ge epitaxial films. With Deltan/F=260 pm/V and Deltaalpha/alpha-3 the material has significant potential for field-induced phase or electro-absorption modulator devices
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